In this paper, we report an on-wafer High-Electron-Mobility transistor characterization method over a large frequency band [250 MHz–1.1 THz]. The transistor’s coplanar accesses were optimized to enable high-frequency measurement of the devices up to 1.1 THz. The characterization method implements an on-wafer multiline Thru-Reflect-Line calibration kit fabricated on indium phosphide (InP) substrate validated using comparisons between simulations and measurements of coplanar waveguide (CPW) devices. An 80-nm gate length InAlAs/InGaAs/InAs InP-HEMT was fabricated using the optimized transistor accesses then it was measured over the [250 MHz–1.1 THz] frequency band using the developed on-wafer characterization method. It is important to mention that the same transistor was measured on six different on-wafer test benches [250 MHz–110 GHz], [140–220 GHz], [220–325 GHz], [325–480 GHz], [500–750 GHz], and [750–1100 GHz]. The S-parameter measurement results show good continuity between the six measured frequency bands. Observations on the extracted gain measurements and a comparison between the measured and [250 MHz–110 GHz] extrapolated cut-off frequencies are also provided.

We consider a two-layer fluid of finite depth with a free surface and, in particular, the surface tension at the free surface and the interface. The usual assumptions of a linearized theory are considered. The objective of this work is to analyse the effect of surface tension on trapped modes, when a horizontal circular cylinder is submerged in either of the layers of a two-layer fluid. By setting up boundary value problems for both of the layers, we find the frequencies for which trapped waves exist. Then, we numerically analyse the effect of variation of surface tension parameters on the trapped modes, and conclude that realistic changes in surface tension do not have a significant effect on the frequencies of these.