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A 250 MHz to 1.1 THz sub-mm wave on-wafer characterization of InP HEMT using a multiline Thru-Reflect-Line calibration kit
Published online by Cambridge University Press: 07 October 2025
Abstract
In this paper, we report an on-wafer High-Electron-Mobility transistor characterization method over a large frequency band [250 MHz–1.1 THz]. The transistor’s coplanar accesses were optimized to enable high-frequency measurement of the devices up to 1.1 THz. The characterization method implements an on-wafer multiline Thru-Reflect-Line calibration kit fabricated on indium phosphide (InP) substrate validated using comparisons between simulations and measurements of coplanar waveguide (CPW) devices. An 80-nm gate length InAlAs/InGaAs/InAs InP-HEMT was fabricated using the optimized transistor accesses then it was measured over the [250 MHz–1.1 THz] frequency band using the developed on-wafer characterization method. It is important to mention that the same transistor was measured on six different on-wafer test benches [250 MHz–110 GHz], [140–220 GHz], [220–325 GHz], [325–480 GHz], [500–750 GHz], and [750–1100 GHz]. The S-parameter measurement results show good continuity between the six measured frequency bands. Observations on the extracted gain measurements and a comparison between the measured and [250 MHz–110 GHz] extrapolated cut-off frequencies are also provided.
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- © The Author(s), 2025. Published by Cambridge University Press in association with The European Microwave Association.
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