Hostname: page-component-65b85459fc-rnwf8 Total loading time: 0 Render date: 2025-10-15T13:18:45.725Z Has data issue: false hasContentIssue false
  • English
  • Français

Wide-gap CIGS solar cells with Zn1-y Mgy O transparent conducting film

Published online by Cambridge University Press:  01 February 2011

K. Matsubara ,
A. Yamada ,
S. Ishizuka ,
K. Sakurai ,
H. Tampo ,
Y. Kimura ,
S. Nakamura ,
M. Yonemura ,
H. Nakanishi  and
S. Niki
K. Matsubara
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
A. Yamada
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
S. Ishizuka
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
K. Sakurai
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
H. Tampo
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
Y. Kimura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
S. Nakamura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
M. Yonemura
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
H. Nakanishi
Affiliation:
Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan
S. Niki
Affiliation:
National Institutes of Advanced Industrial Science and Technology, Umezono 1-1-1, Tsukuba, 305-8568, Japan
Get access

Abstract

Zn1-y Mgy O bandgap controllable transparent conducting films were used for the wide-gap Cu(In1-x Gax )Se2 thin film solar cells. Undoped Zn1-y Mgy O and Al doped Zn1-y Mgy O films were deposited by co-sputtering using a carousel type sputtering apparatus. Zn1-y Mgy O films with Mg content y of up to 0.10 were examined. For Cu(In1-x Gax )Se2 with band gap energy ˜1.38 eV, the cell performance was slightly improved by using Zn1-y Mgy O and Al doped Zn1-y Mgy O instead of ZnO and Al doped ZnO. An unexpected improvement of short circuit current density was observed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F14.6
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Ramanathan, K., Contreras, M., Perkins, C.L., S.Asher, Hasoon, F.S., Keane, J., Young, D., Romero, M., Metzger, W., Noufi, R., Ward, J. and Duda, A., Prog. Photovolt: Res. Appl., 11, 225 (2003).Google Scholar
[2] Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., Noufi, R., Prog. Photovolt: Res. Appl., 7, 311 (1999).Google Scholar
[3] Gloeckler, M. and Sites, J.R., Thin Solid Films, in press.Google Scholar
[4] Minemoto, T., Hashimoto, Y., Shams-Kolahi, W., Satoh, T., Negami, T., Takakura, H., Hamakawa, Y., Sol. Energy Mater. Sol. Cells, 75, 121 (2003).Google Scholar
[5] Yamada, A., Matsubara, K., Sakurai, K., Ishizuka, S., Tampo, H., Fons, P. J., Iwata, K., and Niki, S., Appl. Phys. Lett., 85, 5607 (2004).Google Scholar
[6] Ishizuka, S., Sakurai, K., Yamada, A., Matsubara, K., Fons, P., Iwata, K., Nakamura, S., Kimura, Y., Baba, T., Nakanishi, H., Kojima, T., Niki, S., Sol. Energy Mater. Sol. Cells, in press.Google Scholar
[7] Matsubara, K., Tampo, H., Shibata, H., Yamada, A., Fons, P., Iwata, K., and Niki, S., Appl. Phys. Lett., 85, 1374 (2004).Google Scholar
[8] Turcu, M., Kotschau, I. M. and Rau, U., Appl. Phys. A 73, 769 (2001).Google Scholar
[9] Swank, R.K., Phys. Rev. 153, 844 (1967)Google Scholar
[10] Wilke, W. Maierhofer, Ch., Horn, K., J. Vac. Sci. Technol. B 8, 760 (1990)Google Scholar
[11] Sugiyama, M., Nakanishi, H., and Chichibu, S.F.., Jpn. J. Appl. Phys., 40, L428 (2001)Google Scholar