Hostname: page-component-65b85459fc-bv86r Total loading time: 0 Render date: 2025-10-15T23:12:25.621Z Has data issue: false hasContentIssue false
  • English
  • Français

Sample Geometry Effects on Electric-Field-Induced Displacements in Piezoelectric Thin Films Measured by Atomic Force Microscopy

Published online by Cambridge University Press:  01 February 2011

Hirotake Okino ,
Hirofumi Matsuda ,
Takashi Iijima ,
Shintaro Yokoyama ,
Hiroshi Funakubo  and
Takashi Yamamoto
Hirotake Okino
Affiliation:
Department of Communications Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka, Kanagawa 239–8686, Japan
Hirofumi Matsuda
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1–1–1 Umezono, Tsukuba 305–8568, Japan
Takashi Iijima
Affiliation:
Smart Structure Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1–1–1 Umezono, Tsukuba 305–8568, Japan
Shintaro Yokoyama
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Takashi Yamamoto
Affiliation:
Department of Communications Engineering, National Defense Academy, 1–10–20 Hashirimizu, Yokosuka, Kanagawa 239–8686, Japan
Get access

Abstract

Electric-field-induced displacements of PZT film capacitor Pt/PZT(5μm)/Pt/SiO2/Si(100) were calculated by finite element method with various parameters of sample geometry: the diameter of top electrode φ TE ranging from 0.2 μ m to 1000 μ m and whether PZT film was continuous or side-etched. If φ TE was larger than 40μ m, surface longitudinal displacement (corresponding to AFM-measured strain) was not equal to net longitudinal displacement of PZT film, including a contribution of the bending motion of substrate. In contrast, if φ TE was smaller than 4μ m and PZT film was continuous, effective d 33 evaluated from net longitudinal displacement was smaller than intrinsic d 33, because the side PZT film clamped the edge of the capacitor disk and prevented the whole disk from elongating longitudinally. It was also revealed that d 33 value calculated from net longitudinal displacement of PZT film depended on the Poisson's ratio of PZT and was not equal to intrinsic d 33, excluding the case that φ TE was smaller than 4μ m and PZT film was side-etched. In conclusion, it is suggested that smaller φ TE (< 4μ m, in our case) and side-etch treatment permit a precision measurement of d 33; however this condition is difficult to be satisfied experimentally.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C11.29
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Maiwa, H., Maria, J.-P., Christman, J. A., Kim, S.-H., Streiffer, S. K., and Kingon, A. I., Integr. Ferroelectr. 24, 139 (1999).Google Scholar
2. Maiwa, H. and Ichinose, N., Jpn. J. Appl. Phys 39, 5403 (2000).Google Scholar
3. Bühlmann, S., Dwir, B., Baborowski, J., and Muralt, P., Appl. Phys. Lett. 80, 3195 (2002).Google Scholar
4. Nagarajan, V. et al., Appl. Phys. Lett. 81, 4215 (2002).Google Scholar
5. Iijima, T., Ito, S., and Matsuda, H., Jpn. J. Appl. Phys. 41, 6735 (2002).Google Scholar
6. Kholkine, A. L., Wüetchrich, C., Taylor, D. V., and Setter, N., Rev. Sci. Instrum. 67, 1935 (1996).Google Scholar
7. Iijima, T., Hayashi, Y., and Onagawa, J., Mater. Res. Soc. Symp. Proc. 688, 343 (2002).Google Scholar
8. Iijima, T. and Kunii, K., Jpn. J. Appl. Phys. 40, 5740 (2001).Google Scholar
9. Xu, F., Chu, F., Shepard, J. F. Jr, and Troiler-McKinstry, S., Mater. Res. Soc. Symp. Proc. 493, 427 (1998).Google Scholar
10. Shackelford, J. F. and Alexander, W., CRC Materials Science and Engineering Handbook, (CRC Press, Boca Raton, 2000), p. 48 Google Scholar
11. National Astronomical Observatory of Japan, Rikanenpyou (in Japanese), (Maruzen, Tokyo, 1979), p. “Physics”-24Google Scholar
12. Spinner, S., J. Am. Ceram. Soc. 39, 113 (1956).Google Scholar
13. Shackelford, J. F. and Alexander, W., CRC Materials Science and Engineering Handbook, (CRC Press, Boca Raton, 2000), p. 46 Google Scholar
14. Gan, L., Ben-Nissan, B., and Ben-David, A., Thin Solid Films 290–291, 362 (1996).Google Scholar
15. Berlincourt, D. A., Cmolik, C., and Jaffe, H., Proc. of Inst. Radio Eng. 48, 220 (1960).Google Scholar
16. Lefki, K. and Dormans, G. J. M., J. Appl. Phys. 76, 1764 (1994).Google Scholar