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Rapid Thermal Annealing of Si-Implanted GaAs for PowerFETs

Published online by Cambridge University Press:  25 February 2011

H. Kanber ,
R. J. Cipolli  and
J. M. Whelan
H. Kanber
Affiliation:
Torrance Research Center, Hughes Aircraft Company, Torrance, CA 90509
R. J. Cipolli
Affiliation:
Torrance Research Center, Hughes Aircraft Company, Torrance, CA 90509
J. M. Whelan
Affiliation:
Materials Science Dept., University of Southern California, Los Angeles, CA 90089
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Abstract

Optimization and the advantages of rapid thermal annealing (RTA) for theelectrical activation of deep 300 keV Si+ implants into GaAs areinvestigated and established for doses of 6 to 8×1012 cm−2. These implant conditions are appropriate for power FETs.Results are compared with those based on conventional controlled atmospherecapless furnace annealing (CAT).

The RTA yielded higher peak electron concentrations, high mobilities andgreater uniformities in the gateless FET saturation currents. The deepimplant results ontrast with those for shallower implants for low noiseFETs. These differences are explained using a well-known implant damagemodel.

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References

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