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Questions And Answers On The Activation Strain

Published online by Cambridge University Press:  15 February 2011

Michael J. Aziz
Michael J. Aziz*
Affiliation:
Division of Applied Sciences, Harvard University, 29 Oxford St., Cambridge MA 02138
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Abstract

The activation strain tensor describes the effect of nonhydrostatic stresseson atomic or interfacial Mobilities. It has been measured for solid phaseepitaxial growth of crystalline Si (001) into amorphous Si. The activationstrain concept is explained and some subtle points are discussed.Implications for proposed mechanisms of solid phase epitaxy are reviewed,and new implications for combined bulk and interfacial control arepresented. Questions raised during the oral presentation are answered.

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References

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