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The Problem of Doping Wide Gap II-VI Compound Semiconductors andIts Solutions

Published online by Cambridge University Press:  21 February 2011

W. I. Wang
W. I. Wang*
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
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Abstract

Wide gap II-VI compound semiconductors are difficult to be dopedamphoterically. After more than thirty years of research in II-VI compoundsemiconductors, there does not even exist a satisfatory simultaneousexplanation as to why ZnSe can be easily doped n-type while undoped ZnTeonly exhibits p-type conductivity. In this paper we propose an explanationbased on the III-V/II-VI analogy which for the first time can explain thesephenomena, and provide solutions to the problem of doping II-VI compoundsemiconductors.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 319
Copyright
Copyright © Materials Research Society 1992

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References

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