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Post Annealing Studies Of C60 Ion Implanted ThinFilms

Published online by Cambridge University Press:  17 March 2011

Nethaji Dharmarasu ,
Kannan L. Narayanan ,
Nabuaki Kojima ,
Yoshio Ohshita  and
Masafumi Yamaguchi
Nethaji Dharmarasu
Affiliation:
TOYOTA TECHNOLOGICAL INSTITUTE, 2-12-1 HISAKATA, TEMPAKU, NAGOYA 468- 8511, JAPAN
Kannan L. Narayanan
Affiliation:
TOYOTA TECHNOLOGICAL INSTITUTE, 2-12-1 HISAKATA, TEMPAKU, NAGOYA 468- 8511, JAPAN
Nabuaki Kojima
Affiliation:
TOYOTA TECHNOLOGICAL INSTITUTE, 2-12-1 HISAKATA, TEMPAKU, NAGOYA 468- 8511, JAPAN
Yoshio Ohshita
Affiliation:
TOYOTA TECHNOLOGICAL INSTITUTE, 2-12-1 HISAKATA, TEMPAKU, NAGOYA 468- 8511, JAPAN
Masafumi Yamaguchi
Affiliation:
TOYOTA TECHNOLOGICAL INSTITUTE, 2-12-1 HISAKATA, TEMPAKU, NAGOYA 468- 8511, JAPAN
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Abstract

Physical properties of multiple-energy B-ion implanted C60 thinfilms were investigated for various doses. Fourier Transform Infra-redSpectroscopy (FTIR) results indicate the structural transformation of C60 to amorphous carbon phase during implantation. Theconductivity type of the implanted films is found to be p-type and theconductivity measurements reveal a dramatic increase in the conductivitywith ion implantation. Temperature dependent conductivity shows thesemiconducting nature of the B-ion implanted films. The optical absorptioncoefficient and optical gap of the implanted films have been observed as afunction of B-ion dose. Measurements on implanted films subjected to thermalannealing indicate the removal of the defects caused during theimplantation. Ion implantation-induced defects are found to partiallyannihilate with the annealing temperature. Electrical conductivity andoptical gap are determined in the post-implanted films. The observation ofthe systematic increase in the conductivity of the annealed films is due tothe removal of the defects and the formation of defect free boron impurityacceptor.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O14.8/R9.8
Copyright
Copyright © Materials Research Society 2001

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