Hostname: page-component-65b85459fc-bczq6 Total loading time: 0 Render date: 2025-10-15T09:20:11.319Z Has data issue: false hasContentIssue false
  • English
  • Français

Optimal Annealing Conditions of InGaAs Films for Selective Area Epitaxy of Quantum Dots by Indium Segregation

Published online by Cambridge University Press:  10 February 2011

Terence S. Yeoh ,
Reuel B. Swint ,
Victor C. Elarde  and
James J. Coleman
Terence S. Yeoh
Affiliation:
Department of Materials Science and Engineering, University of Illinois Urbana, IL 61801, U.S.A.
Reuel B. Swint
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois Urbana, IL 61801, U.S.A.
Victor C. Elarde
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois Urbana, IL 61801, U.S.A.
James J. Coleman
Affiliation:
Department of Electrical and Computer Engineering, University of Illinois Urbana, IL 61801, U.S.A.
Get access

Abstract

The surface of strained InGaAs films on GaAs for selective regrowth of InAs nanostructures is investigated by atomic force microscopy and Rutherford backscattering. Various InxGa1-xAs films were annealed at temperatures between 400°C - 800°C. Significant indium desorption was found to occur at temperatures above 550°C.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 775: Symposium P – Self-Assembled Nanostructured Materials , 2003 , P9.36
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Yeoh, T. S., Swint, R. B., Gaur, A., Elarde, V. C., and Coleman, J. J., “Selective growth of InAs quantum dots by metalorganic chemical vapor deposition,” Selected Topics in Quantum Electronics, vol. 8, pp. 833–838, 2002.Google Scholar
[2] Reithmaier, J. P., Riechert, H., and Schlotterer, H., “Indium desorption during MBE growth of strained InGaAs layers,” presented at Journal of Crystal Growth, vol. 111, no.1-4, May 1991, pp.407–12. Netherlands., 1991.Google Scholar
[3] Heinrichsdorff, F., Krost, A., Bimberg, D., Kosogov, A. O., and Werner, P., “Self organized defect free InAs/GaAs and InAs/InGaAs/GaAs quantum dots with high lateral density grown by MOCVD,” Elsevier. Applied Surface Science, vol. 123-124, pp. 725–8, 1998.Google Scholar