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Optical Bias Enhanced Transient Photoconductivity in a-Si:H

Published online by Cambridge University Press:  25 February 2011

Xing Chen  and
Chen-Yu Tai
Xing Chen
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 USA
Chen-Yu Tai
Affiliation:
Department of Physics and Astronomy, University of Toledo, Toledo, Ohio 43606 USA
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Abstract

Optical bias enhancement in transient photocurrent, by a factor of more than 10, is observed in a-Si:H films. The transient photocurrent is found to decay exponentially shortly after the light pulse is turned off. The exponential decay constant of the transient current is found to be proportional to (optical bias level)−0.38 at room temperature. A theory based on the multiple trapping model is developed to explain the experimental result. This effect is applied to study the density of state of the sample as well as the process of charge recombination.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 333
Copyright
Copyright © Materials Research Society 1989

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References

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