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On the Properties of Weakly Absorbing Highly Conductive SiC Thin Films Prepared in a TCDDC System

Published online by Cambridge University Press:  25 February 2011

R. Martins  and
G. Willeke
R. Martins
Affiliation:
Faculty of Science and Technology, New University of Lisbon/ UNINOVA, Monte da Caparica, Portugal
G. Willeke
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium
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Abstract

p- and n-type weakly absorbing highly conductive (σ>0.1(Ωcm)-1) SiC thin films with similar structural and optoelectronic properties have been prepared in a TCDDC reactor. These films contain Si microcrystals embedded in an amorphous Si:O:C:H matrix. C is preferentially incorporated as stoichiometric SiC, whereas O is present mainly as suboxide. Absorption coefficients smaller than cr-Si are observed for films containing about 20at% C and 25at% O. From diffraction studies there is no evidence for the presence of SiC crystallites. Photoluminescence studies show a peak at about 1.68eV, similar to gd a-SiC:H of comparable optical properties.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 369
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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