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Modulator Structure Using In(As, P)/lnP Strained MultipleQuantum Wells Grown By Gas-Source MBE

Published online by Cambridge University Press:  21 February 2011

H. Q. Hou ,
T. P. Chin ,
B. W. Liang  and
C. W Tu
H. Q. Hou
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093–0407
T. P. Chin
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093–0407
B. W. Liang
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093–0407
C. W Tu
Affiliation:
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA 92093–0407
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Abstract

In(As, P)/InP strained multiple quantum wells (SMQW's) were grown withgas-source molecular-beam epitaxy (GSMBE). A successful control of the Ascomposition was achieved over a wide range by using two techniques.High-quality samples were characterized structurally and optically by x-raydiffractometry, transmission electron microscopy (TEM), photoluminescence(PL) and absorption measurements. Excitonic emission energy and the criticallayer thickness of In(As, P)/InP SMQW's are calculated as a function of theAs composition. The results show that 1.06, 1.3 and 1.55 μm excitonicemission can be achieved at room temperature using this material system. Wealso discuss the perspective of using In(As, P)/InP SMQW's for modulatorapplication.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 231
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Casey, H. C. Jr. and Panish, M. B., Heterostructure Lasers, (Academic Press, New York, 1978).Google Scholar
2. Panish, M. B. and Sumski, S., J. Appl. Phys. 55, 3571 (1984).CrossRefGoogle Scholar
3. Soucail, B., Voisin, P., Voos, M., Rondi, D., Nagle, J., and Cremoux, B.de, Superlattices and Microstructures 8, 279 (1989).Google Scholar
4. Tsang, H. K., Soole, J. B. D., LeBlanc, H. P., Bhat, R., Koza, M. A., and White, I. H., Appl. Phys. Lett. 57, 2285 (1990).Google Scholar
5. Huang, K. H. and Wessels, B. W., J. Cryst. Growth 92, 547 (1988).CrossRefGoogle Scholar
6. Schneider, R. P. Jr., Li, D. X., and Wessels, B. W., J. Electrochem. Soc. 136, 3490 (1989).Google Scholar
7. Woodward, T. K., Sizer, T., and Chiu, T. H., Appl. Phys. Lett. 58, 1366 (1991).CrossRefGoogle Scholar
8. Hou, H. Q., Tu, C. W., and Chu, S. N. G., Appl. Phys. Lett. 58, (1991), (to be published).Google Scholar
9. Matthews, J. W. and Blakeslee, A. E., J. Cryst. Growth 27, 118 (1974).Google Scholar
10. People, R. and Bean, J. C., Appl. Phys. Lett. 47, 322 (1985); 49, 229 (E) (1986).Google Scholar
11. Fukui, T. and Kobayashi, N., J. Cryst. Growth 71, 9 (1985).Google Scholar
12. Schneider, R. P. Jr. and Wessels, B. W., Superlattices and Microstructures 6, 287 (1989); and Mat. Res. Soc. Symp. Proc. 145, 145 (1989).CrossRefGoogle Scholar
13. Bastard, G. and Brum, J. A., IEEE J. Quantum Eletron. OE– 22, 1625 (1986).CrossRefGoogle Scholar
14. Landolt-Bornstein New Series, Group III, vol.22a, edited by Madelung, O., (Springer- Verlag, Berlin, 1988).Google Scholar
15. Andersson, T. G., Chen, Z. G., Kulakovskii, V. D., Uddin, A., and Vallin, J. T., Appl. Phys. Lett. 51, 752 (1987).Google Scholar
16. Woodward, T. K., Sizer, T., Sivco, D. L., and Cho, A. Y., Appl. Phys. Lett. 57, 548 (1990).CrossRefGoogle Scholar