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Local Structure Surrounding Implanted As+ Ions inPolysulfone Films

Published online by Cambridge University Press:  15 February 2011

R. A. Mayanovic ,
Y. Feng ,
K. W. Groh ,
Y. Wang ,
R. E. Giedd  and
M.G. Moss
R. A. Mayanovic
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
Y. Feng
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
K. W. Groh
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
Y. Wang
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
R. E. Giedd
Affiliation:
Dept. of Physics and Astronomy, Southwest Missouri State University, Springfield, MO 65804
M.G. Moss
Affiliation:
Brewer Science Inc., Rolla, MO 65401
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Abstract

Results from As K-edge XAFS studies on polysulfone films implanted with 50KeV As+ in the dose range of 1015 to 1016 ions/cm2 indicate that As reacts chemically with O atoms toform As- (3) 0 based molecular structures having As-0 bond lengths equal to1.81±0.02 Å. In comparison to samples implanted in the dose range 101S to 1016 ions/cm2, the molecularenvironment surrounding As in polysulfone implanted at 1017 ions/cm2 has additional structure beyond the nearest-neighborO atoms.

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References

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