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Ion Beam Induced Epitaxial Crystallization of Single Crystalline6H-SiC

Published online by Cambridge University Press:  15 February 2011

V. Heera ,
R. Kögler ,
W. Skorupa  and
E. Glaser
V. Heera
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
R. Kögler
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
W. Skorupa
Affiliation:
Research Center Rossendorf Inc., P.O.B. 510119, D-01314 Dresden, Germany
E. Glaser
Affiliation:
FSU Jena, Institute of Solid State Physics, Max-Wien-Platz 1, D-07743 Jena, Germany
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Abstract

For the first time, ion beam induced epitaxial crystallization (IBIEC) hasbeen found in SiC. The effect of 300 keV Si+ irradiation throughan amorphous surface layer in single crystalline 6H-SiC at 477+5°C has beeninvestigated by RBS/C and XTEM. A shrinkage of the amorphous layer was foundafter ion irradiation at this temperature which is caused by both an iondose independent thermal regrowth of about 20 nm and an additional ion beaminduced epitaxial crystallization with a rate of about 1.5 nm/ 1016 cm−2.

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References

REFERENCES

1. Davies, R. F. and Glass, J. T., Advances in Solid State Chemistry 2, 1 (1991).Google Scholar
2. Pensi, G. and Heibig, R., in Festkörperprobleme/ Advances in Solid State Physics, Vol. 30, ed. by Rössler, U. (Vieweg, Braunschweig 1990), pp. 133–156.Google Scholar
3. Powell, J. A., Neudeck, P.G., Matus, L.G. and Petit, J.B., Mat. Res. Soc. Symp. Proc. 242, 495 (1992).Google Scholar
4. Cree Research, Inc., Durham, NC 27713, USAGoogle Scholar
5. Spitznagel, J.A., Wood, S., Choyke, W. J., Doyle, N.J., Bradshaw, J. and Fishman, S. G., Nucl. Instr. Meth. B 16, 237 (1986)Google Scholar
6. Edmond, J. A., Withrow, S. P., Kong, H. S. and Davies, R. F., Mat. Res. Soc. Symp. Proc. 51, 395 (1986).Google Scholar
7. Ryu, J., Kim, H. J. and Davies, R. F., Mat. Res. Soc. Symp. Proc. 52, 165 (1986).Google Scholar
8. Bohn, H. G., Williams, J. M., McHargue, C. J. and Begun, G.M., J. Mater. Res. 2, 107 (1987).Google Scholar
9. McHargue, C. J. and Williams, J. M., Nucl. Instr. Meth. B80/81, 889 (1993).Google Scholar
10. Priolo, F. and Rimini, E., Mater. Sci. Rep. 5, 319 (1990).Google Scholar
11. Elliman, R.G., Ridgway, M.C., Williams, J. S. and Bean, J.C., Appl. Phys. Lett. 55, 843 (1989).Google Scholar
12. Johnson, S. T., Williams, J.S., Nygren, E. and Elliman, R.G., J. Appl. Phys. 64, 6567 (1988).Google Scholar
13. Williams, J. S., Ridgway, M.C., Elliman, R. G., Davies, J.A., Johnson, S.T. and Palmer, G. R., Nucl. Instr. Meth. B 55, 602 (1991).Google Scholar
14. Zhou, W., Sood, D. K., Elliman, R. G. and Ridgway, M. C., Nucl. Instr. Meth. B80/81, 1104 (1993).Google Scholar
15. Kobayashi, N., Koboyashi, H. and Kumashiro, Y., Nucl. Instr. Meth. B40/41, 550 (1989).Google Scholar