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Insitu Observation of the Formation Dynamics of Nanohelices

Published online by Cambridge University Press:  01 February 2011

Terence Yeoh ,
Maribeth Mason ,
Zack Feinberg ,
Martin Leung ,
Mehmet Tasci ,
Victor Elarde  and
James J Coleman
Terence Yeoh
Affiliation:
Terence.S.Yeoh@aero.org, The Aerospace Corporation, Microelectronics Technology Department, 2350 E. El Segundo Blvd, El Segundo, CA, 90245, United States
Maribeth Mason
Affiliation:
Maribeth.Mason@aero.org, The Aerospace Corporation, Microelectronics Technology Department, 2350 E. El Segundo Blvd, El Segundo, CA, 90245, United States
Zack Feinberg
Affiliation:
zack@stanford.edu, The Aerospace Corporation, Microelectronics Technology Department, 2350 E. El Segundo Blvd, El Segundo, CA, 90245, United States
Martin Leung
Affiliation:
Martin.Leung@aero.org, The Aerospace Corporation, Microelectronics Technology Department, 2350 E. El Segundo Blvd, El Segundo, CA, 90245, United States
Mehmet Tasci
Affiliation:
Terence.S.Yeoh@aero.org, University of Illinois at Urbana-Champaign, Electrical and Computer Engineering, 208 N Wright Street, Urbana, Illinois, 61801, United States
Victor Elarde
Affiliation:
vcelarde@uiuc.edu, University of Illinois at Urbana-Champaign, Electrical and Computer Engineering, 208 N Wright Street, Urbana, Illinois, 61801, United States
James J Coleman
Affiliation:
jcoleman@uiuc.edu, University of Illinois at Urbana-Champaign, Electrical and Computer Engineering, 208 N Wright Street, Urbana, Illinois, 61801, United States
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Abstract

Strained InGaAs/GaAs bridges were released by a focused ion beam in order to observe the relaxation dynamics of the structure. Releasing the bridges resulted in the formation of chiral nanotubes with diameter of 920 nm and length 8.5 microns. The total time required for nanoscroll formation took > 20 minutes. From observing the scrolling action through time, it was found that the strain relief process differed from traditional wet etched nanoscrolls due to the simultaneous relief of strain from the released structures.

Keywords

nanostructurestress/strain relationshipion-beam processing

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 924: Symposium Z – Mechanics of Nanoscale Materials and Devices , 2006 , 0924-Z06-06
Copyright
Copyright © Materials Research Society 2006

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References

[1] Prinz, V. Y., Seleznev, V. A., Gutakovsky, A. K., , C. A. V., Preobrazhenskii, V. V., Putyato, M. A., and Gavrilova, T. A., “Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices, and their arrays,” Physica E, vol. 6, pp. 828–831, 2000.Google Scholar
[2] Vorob'ev, A., Voccaro, P. O., Kubota, K., Aida, T., Tokuda, T., Hayashi, T., Sakano, Y., Ohta, J., and Nunoshita, M., “SiGe/Si microtubes fabricated on a siliconon-insulator substrate,” Journal of Physics D: Applied Physics, vol. 36, pp. 71–73, 2003.Google Scholar
[3] Schumacher, O., Mendach, S., Welsch, H., Schramm, A., Heyn, C., and Hansen, W., “Lithographically defined metal-semiconductor-hybrid nanoscrolls,” Applied Physics Letters, vol. 86, pp. 143109, 2005.Google Scholar