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The Influence of the Crystalline Structure on the Electrical Properties of BaTiO3/SrRuO, Heterostructures

Published online by Cambridge University Press:  15 February 2011

L.A. Wills  and
Jun Amano
L.A. Wills
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
Jun Amano
Affiliation:
Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, CA 94304
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Abstract

Epitaxial BaTiO3/SrRuO3 heterostructures were deposited on MgO and SrTiO3 substrates by 90° off-axis, rf-magnetron sputtering. A template layer growth was required to obtain epitaxy on MgO. The crystalline structure of the films was analyzed with x-ray diffraction. The leakage current and remanent polarization depended on the crystalline structure and processing parameters. The BaTiO3 thin films displayed remanent polarizations of 13 μC/cm2 and leakage current densities of 107 Amps/cm2 at 2 volts. The BaTiO3 thin films grown under optimal conditions displayed very little fatigue up to 5×108 cycles.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 471
Copyright
Copyright © Materials Research Society 1995

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References

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