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The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

Published online by Cambridge University Press:  15 February 2011

Wan In Lee ,
J.K. Lee ,
Elsub Chung ,
C.W. Chung ,
I.K. Yoo  and
Seshu B. Desu
Wan In Lee
Affiliation:
Materials & Device Research Center, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, Kyungki 440–600, Korea
J.K. Lee
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA 24061
Elsub Chung
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA 24061
C.W. Chung
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA 24061
I.K. Yoo
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA 24061
Seshu B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA 24061
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Abstract

PZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 421
Copyright
Copyright © Materials Research Society 1995

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References

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