Hostname: page-component-65b85459fc-s9f5t Total loading time: 0 Render date: 2025-10-15T11:27:31.772Z Has data issue: false hasContentIssue false
  • English
  • Français

Carbon Precipitation in Cz and Efg Silicon

Published online by Cambridge University Press:  28 February 2011

S. Q. Feng ,
J. P. Kalejs  and
D. G. Ast
S. Q. Feng
Affiliation:
Physics Department of Peking University, PRC
J. P. Kalejs
Affiliation:
Mobil Solar Energy Corporation, 16 Hickory Drive, Waltham, MA 02154, U.S.A.
D. G. Ast
Affiliation:
Materials Science and Engineering, Cornell University, Ithaca, NY 14853, U.S.A.
Get access

Abstract

The defects formed in carbon rich CZ and EFG silicon after a 900°C, 160 or 560 min long, phosphorous diffusion were studied with TEM. Besides misfit dislocations, numerous precipitates were observed in the junction region in both materials. However, no precipitates were found in the bulk. The precipitates in CZ had a larger strain field than those in EFG material. The difference in the extent of the strain field of precipitates in CZ and EFG silicon can be ascribed to the higher oxygen content in CZ silicon. It appears that oxygen is involved in the Si-self interstitial promoted precipitation of carbon.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Graff, K., Hilgarth, J. and Neubrand, H., Semiconductor Silicon 1977, (ECS77–2, Eds. Huff, H.R. and E. Sirtl), p. 575.Google Scholar
[2] Ladd, L.A., Kalejs, J.P. and Gosele, U., MRS Proc. 36 (1985) p. 89; see also Ladd, L.A. and Kalejs, J.P. this volume.Google Scholar
[3] Gleichmann, R., Kalejs, J.P. and Ast, D.G., MRS Proc. 36 (1985) p.181.CrossRefGoogle Scholar
[4] Strunk, H., Gosele, U. and Kolbesen, B.O., Appl. Phys. Lett., 34 (1979) p. 530.Google Scholar
[5] Fahey, P., Dutton, R.W. and Hu, S.M., Appl. Phy. Lett., 44 (1984) p. 777.CrossRefGoogle Scholar
[6] Edington, J.W., Practical Electron Microscopy in Materials Science 3, (1975) pp. 35 and 59–60.Google Scholar
[7] Ashby, M.F. and Brown, L.M., Phil. Mag., 8 (1963) p. 1083.Google Scholar
[8] Magnea, N., Lazrak, H. and Pautrat, J.L., Appl. Phys. Lett. 45, (1984) p. 60.Google Scholar