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Low Temperature Growth of Gaas Quantum Well Lasers by ModulatedBeam Epitaxy

Published online by Cambridge University Press:  21 February 2011

S. Xin ,
K. F. Longenbach ,
C. Schwartz ,
Y. Jiang  and
W. I. Wang
S. Xin
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
K. F. Longenbach
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
C. Schwartz
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
Y. Jiang
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
W. I. Wang
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
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Abstract

GaAs single quantum well lasers have been successfully grown at lowtemperatures by a modulated beam epitaxy process in which the Al/Ga flux isheld constant while the As flux is periodically shut off to produce ametal-rich surface. Devices grown at a substrate temperature of 500 °Cexhibit threshold current densities below 1 kA/cm2. This value islower than normally grown low temperature lasers and is the lowest achievedby any low substrate temperature growth technique. In addition, lowtemperature (10 K) photoluminescence of single quantum wells grown with thistechnique exhibit full-width half maximum values, comparable to thatattainable by higher temperature growth techniques. The improved quality ofthese low temperature grown quantum structures is attributed to both asmoothing of the growth front and a reduction of excess As during themodulated beam epitaxy process. The high growth rates and less frequentshutter operation of this technique make it a more practical than migrationenhanced epitaxy or atomic layer epitaxy for low temperature growth.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 203
Copyright
Copyright © Materials Research Society 1992

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References

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