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High Temperature Ohmie Contacts for N-Tvpe Β-Sic Sensors

Published online by Cambridge University Press:  25 February 2011

J. S. Sho ,
R. A. Weber ,
L. G. Provost ,
D. Goldstein  and
A. D. Kurtz
J. S. Sho
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
R. A. Weber
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
L. G. Provost
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
D. Goldstein
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
A. D. Kurtz
Affiliation:
Kulite Semiconductor Products, Inc, Leonia, NJ
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Abstract

In order to fabricate high temperature sensors and other devices, it is necessary to develop ohmic contact metallizations that can withstand elevated temperatures. A variety of ohmic contact metallizations were investigated with contact resistivity measured as a function of anneal time in air. The metallizations were based on Ti and W ohmic contacts, which have contact resistivities as low as 10-4 Ω-cm2. Several of the contact metallizations were stable after 10 hrs. at 650°C, while one system, based on a Ti ohmic contact, was able to withstand > 20 hrs. at 650°C with only a 30–40% increase in contact resistivity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 573
Copyright
Copyright © Materials Research Society 1992

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References

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