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Effects of Rare Earth Incorporation on the Ferroelectric andDielectric Properties of Sol-Gel Derived PbTiO3Films

Published online by Cambridge University Press:  21 February 2011

G. Teowee
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
C.D. Baertlein
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
S.A. Schlegel
Affiliation:
Donnelly Corporation, 4545 E. Ft. Lowell Rd., Tucson, Arizona 85712
J.M. Boulton
Affiliation:
Arizona Materials Laboratories, Dept. of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712
D.R. Uhlmann
Affiliation:
Arizona Materials Laboratories, Dept. of Materials Science and Engineering, University of Arizona, Tucson, Arizona 85712
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Abstract

Ferroelectric (FE) films, especially PZT films, have received increasingattention for microelectronics applications such as FE memory and in highdensity DRAM's. While rare earth doped PbTiO3 ceramics has beenstudied for SAW and piezoelectric applications, rare earth-doped filmsseldom have been systematically explored. A series of sol-gel derived PbTiO3 films with varying amounts (5-15 mole %) of rare earths(such as, Nd, Sm, Tb, Dy, Er ,Yb and La ) have been prepared using acetatesand alkoxides as precursors. The solutions were spin coated onto platinizedSi wafers. The effects of the type and amount of rare incorporation on thephase assembly and microstructure have been quantified. The results ofdielectric characterization (e.g., dielectric constant, dissipation factorand leakage currents) and FE behaviors (viz remanent polarization, andcoercive field) are presented; these films exhibited low leakage currents(3E-10 A/cm2) and much higher dielectric constant (up to 525)compared to undoped PbTiO3 films.

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Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

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