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Self-similar solutions for diffusion in semiconductors

Published online by Cambridge University Press:  14 November 2011

L. A. Peletier  and
W. C. Troy
L. A. Peletier
Affiliation:
Mathematical Institute, Leiden University, P.O. Box 9512, 2300 RA Leiden, The Netherlands
W. C. Troy
Affiliation:
Department of Mathematics, University of Pittsburgh, Pittsburgh, PA 15260, U.S.A.
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Abstract

We study the development of concentration profiles in a semi-infinite slab of semiconductor material after impurities have been implanted uniformly through the slab, under the assumption that, at the face of the slab, no impurities can pass and the vacancy concentration is kept at its equilibrium value. It is shown that profiles of self-similar form exist, and their qualitative shape, as well as their asymptotic properties far from the face of the slab, are determined.

Information

Type
Research Article
Information
Proceedings of the Royal Society of Edinburgh Section A: Mathematics , Volume 124 , Issue 3 , 1994 , pp. 473 - 506
Copyright
Copyright © Royal Society of Edinburgh 1994

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