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ZnxCd1−xTe Epitaxial Growth by Remote Plasma Enhanced MOCVD Method

Published online by Cambridge University Press:  10 February 2011

Daiji Noda ,
Torn Aoki ,
Yoichiro Nakanishi  and
Yoshinori Hatanaka
Daiji Noda
Affiliation:
Graduate school of Electronic Science and Technology, Shizuoka University
Torn Aoki
Affiliation:
Graduate school of Electronic Science and Technology, Shizuoka University
Yoichiro Nakanishi
Affiliation:
Graduate school of Electronic Science and Technology, Shizuoka University Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu 432, Japan rgdnoda@rie.shizuoka.ac.jp
Yoshinori Hatanaka
Affiliation:
Graduate school of Electronic Science and Technology, Shizuoka University Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu 432, Japan rgdnoda@rie.shizuoka.ac.jp
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Abstract

For epitaxial growth of compound Zn1−xCd1−XTe by metal organic chemical vapor deposition (MOCVD), it is difficult to obtain a high composition ratio x. In this study, we have adopted a remote plasma enhanced (RPE) MOCVD method for the epitaxial growth. Cd1−xZnxTe with the composition ratio x in the range of 0 to 1 has been obtained while varying the ratio of dimethylcadmium (DMCd) to diethylzinc (DEZn) from 0 to 20%. The crystallinity of the epitaxial films was about 400 to 700 arcsec FWHM defined by X ray diffiraction measurements.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 45
Copyright
Copyright © Materials Research Society 1998

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