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ZNSE/III–V Heterostructures Grown in a Multichamber MBE System

Published online by Cambridge University Press:  26 February 2011

M. C. Tamargo ,
J. L. de Miguel ,
D. M. Hwang ,
B. J. Skromme ,
M. H. Meynadier ,
R. E. Nahory  and
H. H. Farrell
M. C. Tamargo
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
J. L. de Miguel
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
D. M. Hwang
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
B. J. Skromme
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
M. H. Meynadier
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
R. E. Nahory
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
H. H. Farrell
Affiliation:
Bell Communications Research, 331 Newman Springs Road, Red Bank, New Jersey 07701
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Abstract

We have grown ZnSe epitaxial layers on bulk GaAs substrates and on GaAs epitaxial layers, with both As-rich and Ga-rich surface terminations. We have also grown ZnSe on AlAs epitaxial surfaces with different As to Al ratios. In all cases, abrupt, layer-by-layer growth is observed on the As-rich surfaces, while 3-dimensional nucleation is observed on the group III-rich surfaces. GaAs was also grown on ZnSe layers. In this case, microtwins form at the interface whose density diminishes as the layer is made thicker. A growth model is proposed consistent with these results which requires over-all electronic balance at the interface.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 125
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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