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X-ray Microanalysis and High Resolution Imaging of Ge-Au-Ni Metal Layers on Gallium Arsenide

Published online by Cambridge University Press:  22 February 2011

D. Fathy ,
O. L. Krivanek ,
J. C. H. Spence  and
W. M. Paulson
D. Fathy*
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287
O. L. Krivanek
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287
J. C. H. Spence
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287
W. M. Paulson
Affiliation:
Semiconductor Research and Development Laboratories, Motorola, Inc. 5005 East McDowell Road, Phoenix, AZ 85008
*
*Solid State Division,Oak Ridge National Laboratory,Oak Ridge,TN 37830
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Abstract

Ohmic contacts to GaAs have been studied using a high resolution TEM, an SEM and a STEM with an energy dispersive x-ray attachment. Two different deposition sequences of the constituent Au-Ge-Ni metals yielded specific contact resistivities that varied by one order of magnitude. Crosssection images of the interface between the GaAs and the metal Au-Ge-Ni layers following alloying showed protrusions at the interface. Contacts with low specific resistivities showed deeper protrusion and also significantly more Ge and Ni in the GaAs.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 25: Symposium C – Thin Films and Interfaces II , 1983 , 557
Copyright
Copyright © Materials Research Society 1984

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References

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