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Wide-Gap Polysilane Produced by Plasma-Enhanced CVD at Cryogenic Temperatures

Published online by Cambridge University Press:  25 February 2011

S. Miyazaki ,
H. Shin ,
K. Okamoto  and
M. Hirose
S. Miyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
H. Shin
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
K. Okamoto
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

Polysilane thin films have been grown by the rf glow discharge decomposition of SiH4 at substrate temperatures ranging from -84 to -110°C. The infrared absorption spectra have shown that polysilane chains (SiH2)n are predominantly incorporated in the matrix together with SiH3 which terminates the chain. Also, the infrared absorption band at 2120∼2140 cm-1 and a distinct Raman peak at ∼430 cm-1indicates that fairly long chains (SiH2)n with n>11 are produced. Polysilane prepared at -110°C has an optical bandgap of about 3.1 eV and exhibits a visible luminescence around 2.75 eV at 100 K.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 681
Copyright
Copyright © Materials Research Society 1992

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References

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