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Wet-Chemical Processing of Tin-Doped Indium OxideLayers

Published online by Cambridge University Press:  21 February 2011

Mark J. Van Bommel ,
Tom N.M. Bernards  and
Wim Talen
Mark J. Van Bommel
Affiliation:
Philips Research Laboratories, Prof. HolstJaan 4, 5656 AA Eindhoven, The Netherlands.
Tom N.M. Bernards
Affiliation:
Philips Research Laboratories, Prof. HolstJaan 4, 5656 AA Eindhoven, The Netherlands.
Wim Talen
Affiliation:
Philips Research Laboratories, Prof. HolstJaan 4, 5656 AA Eindhoven, The Netherlands.
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Abstract

For industrial applications the wet-chemical deposition of tin-doped indiumoxide (ITO) layers would be favourable, especially at low temperatures.

It is shown that conductive transparent films can be made by spinningsolutions which contain alkoxide precursors of indium and tin. Thehydrolysis conditions of these alkoxides are varied using different water toindiumalkoxide ratios and different hydrolysis times. It is shown that whenprocessed at low temperatures, the hydrolysis of these alkoxides has asevere influence on the electrical properties of the layers. A decrease inresistance as a function of time is observed for ITO layers which are storedat room temperature in an ambient atmosphere. Annealing at 350°C in forminggas further reduces the resistance of the ITO layers.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 346: Symposium N – Better Ceramics Through Chemistry VI , 1994 , 469
Copyright
Copyright © Materials Research Society 1998

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References

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