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Wafer Bonding and Layer Transfer For Thin Film Ferroelectrics

Published online by Cambridge University Press:  11 February 2011

Jennifer L. Ruglovsky ,
Young-Bae Park ,
Cecily A. Ryan  and
Harry A. Atwater
Jennifer L. Ruglovsky
Affiliation:
Gordon-McKay Laboratory, Applied Physics Department, Harvard University, 9 Oxford, Cambridge, MA 02138
Young-Bae Park
Affiliation:
Gordon-McKay Laboratory, Applied Physics Department, Harvard University, 9 Oxford, Cambridge, MA 02138
Cecily A. Ryan
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
Harry A. Atwater
Affiliation:
Gordon-McKay Laboratory, Applied Physics Department, Harvard University, 9 Oxford, Cambridge, MA 02138 Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

We report on the layer transfer of thin ferroelectric materials onto silicon substrates. H+ and He+ ion implantation created a buried sacrificial layer in the c-cut BaTiO3 and LiNbO3 single crystals. Bubble formation and thermodynamics of cavity at the bonding interface have been investigated, and single crystal thin film layers were transferred onto crystalline silicon substrates. We have found that defects generated by ion implantation in ferroelectric materials can be significantly recovered with the subsequent annealing for layer splitting.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U11.7
Copyright
Copyright © Materials Research Society 2003

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References

REFERNCES

1. Scott, J.F. and Paz de Araujo, C.A., Science, 264, 1400 (1989)Google Scholar
2. Polla, D.L. and Francis, L.F., Annu. Rev. Mater. Sci., 28, 563 (1998)Google Scholar
3. Xu, Y., Ferroelectric materials and their applications, Elsevier (1991)Google Scholar
4. Tong, Q.Y. and Gosele, U., Semiconductor wafer bonding, John Wiley & Sons, NY (1999)Google Scholar
5. Bruel, M., Electron Lett., 33, 1201(1995)Google Scholar
6. Mitani, K. and Gosele, U.M., Applied Physics A54, 543 (1999)Google Scholar
7. Aspar, B. et al, J. Elect. Mater, 30, 834 (2001)Google Scholar
8. Tong, Q.Y., Gutjahr, K. and Gosele, U., Appl. Phys. Lett., 70, 1390(1997)Google Scholar
9. Jalaguier, E., et al, Electron Lett., 34, 408 (1998)Google Scholar
10. Zahler, J., Ahn, C., Zaghi, S., Atwater, H., Chu, C., Iles, P., Thin Solid Films, 403, 558 (2002).Google Scholar
11. Ziegler, J.F. et al, The stopping and range of ions in solids, Pergamon, NY (1985)Google Scholar
12. Eriksson, G., Acta Chem. Scand., 25, 2651 (1971)Google Scholar