Hostname: page-component-54dcc4c588-42vt5 Total loading time: 0 Render date: 2025-10-13T01:22:20.824Z Has data issue: false hasContentIssue false
  • English
  • Français

Visible-Light Amorphous Silicon-Nitride Thin Film Light Emitting Diode

Published online by Cambridge University Press:  01 January 1993

Wirote Boonkosum ,
Dusit Kruangam  and
Somsak Panyakeow
Somsak Panyakeow
Affiliation:
Semiconductor Device Research Laboratory, Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok 10330, Thailand
Get access

Abstract

A visible-light Thin Film Light Emitting Diode (TFLED) having a-SiN:H as a luminescent active layer has been developed. The TFLED has a structure of glass substrate/ITO/p a-SiC:H/i a-SiN:H/n a-SiC:H/Al. The emission color could be changed from red to orange, yellow, green and white-blue by varying the optical energy gap of the i a-SiN:H layer in the TFLED. The brightness was in the order of 0.1-1 cd/m2 . A series of systematic investigations on the basic properties of a-SiN:H films carrier injection and recombination mechanism in TFLEDs is described.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 1005
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Kruangam, D., Endo, T., Pu, W.G., Okamoto, H. and Hamakawa, Y., Jpn. J. Appl. Phys., vol. 24, No. 10, L806 (1985).Google Scholar
2. Kruangam, D., Endo, T., Deguchi, M., Guang-Pu, W., Okamoto, H. and Hamakawa, Y., Optoelectron. Devices & Technol. vol. 1, 67 (1986).Google Scholar
3. Kanicki, J. edited, "Amorphous & Microcrystalline Semiconductor Devices", chapter 6, by Kruangam, D., 236 (1991).Google Scholar
4. Kurata, H., Hirose, M. and Osaka, Y., Jpn. J. Appl. Phys., vol. 20, L811 (1981).Google Scholar
5. LeComber, P.G., Spear, W.E. and Ghaith, A., Electron. Lett., vol. 15, 179 (1979).Google Scholar
6. Kruangam, D., Deguchi, M., Tayama, T., Okamoto, H. and Hamakawa, Y., IEEE Trans. Electron Device, vol. 35, no. 7, 957 (1988).Google Scholar
7. Kruangam, D., Boonkosum, W., Siamchai, P. and Panyakeow, S., Extended Abstract of 1992 Int. Conf. Solid State Devices & Materials, Tsukuba, Japan, 563, (1992).Google Scholar
8. Boonkosum, W., Kruangam, D. and Panyakeow, S., Jpn. J. Appl. Phys., vol. 32, (1993).Google Scholar
9. Boonkosum, W., Kruangam, D. and Panyakeow, S., Proc. Int. Symposium on Physical Concepts & Materials for Novel Optoelectronic Device Applications II, Trieste, Italy, 24-27 May, (1993).Google Scholar