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Vertically Integrated Amorphous Silicon Particle Sensors

Published online by Cambridge University Press:  21 March 2011

N. Wyrsch ,
C. Miazza ,
S. Dunand ,
A. Shah ,
D. Moraes ,
G. Anelli ,
M. Despeisse ,
P. Jarron ,
G. Dissertori  and
G. Viertel
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
C. Miazza
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
S. Dunand
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, CH-2000 Neuchâtel, Switzerland
D. Moraes
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
G. Anelli
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
M. Despeisse
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
P. Jarron
Affiliation:
CERN, CH-1211 Genève 23, Switzerland
G. Dissertori
Affiliation:
Institute for Particle Physics, ETH-Zurich, CH-8093 Zurich, Switzerland.
G. Viertel
Affiliation:
Institute for Particle Physics, ETH-Zurich, CH-8093 Zurich, Switzerland.
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Abstract

Vertically integrated particle sensors have been developed using thin-film on ASIC technology. Hydrogenated amorphous silicon n-i-p diodes have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 m). Corresponding diodes were later directly deposited on two types of CMOS readout chips. These vertically integrated particle sensors were tested in beta particle beam from 63Ni and 90Sr sources. Detection of single low- and high- energy beta particle was achieved.

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References

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