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Vapor Phase Synthesis and Characterization of Gallium Nitride Powders

Published online by Cambridge University Press:  17 March 2011

Kazuhiko Hara ,
Yoshinori Matsuo  and
Yuuki Matsuno
Kazuhiko Hara
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8503, Japan
Yoshinori Matsuo
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8503, Japan
Yuuki Matsuno
Affiliation:
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology 4259 Nagatsuda-cho, Midori-ku, Yokohama 226-8503, Japan
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Abstract

GaN crystalline powders have been synthesized by the reaction of a Ga vapor with an ammonia gas at the reaction temperature T r = 900 - 1100°C in an atmospheric-pressure open-tube reactor. The size of GaN particles ranges from 0.2 to 2νm. It was found that the structural and luminescent properties depend strongly on T r. The mean size of the GaN particles increased as T r is raised. The GaN powders exhibited photoluminescence (PL) dominated by the band edge emissions. Thermal quenching is relatively significant for the powders synthesized at lower T r. This is presumably due to enhanced non-radiative recombination at the surface because of their smaller particle size.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G3.31
Copyright
Copyright © Materials Research Society 2001

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References

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