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Vacuum Integrated Fabrication of Buried Heterostructure Edge Emitting Laser Diodes

Published online by Cambridge University Press:  22 February 2011

M. Hong ,
D. Vahkshoori ,
L. H. Grober ,
J. P. Mannaerts ,
S. N. G. Chu ,
J. D. Wynn  and
R. S. Freund
M. Hong
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
D. Vahkshoori
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
L. H. Grober
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. P. Mannaerts
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. N. G. Chu
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. D. Wynn
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. S. Freund
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We describe an in-situ fabrication process which combines electron cyclotron resonance (ECR) plasma H2 to clean native oxides, ECR SiCl4 to etch anisotropically, a brief Cl2 chemical etch to remove any near surface damage and contamination, and molecular beam epitaxial (MBE) regrowth. We report the first buried heterostructure (BH) AlGaAs/GaAs/InGaAs edge emitting laser diodes fabricated using this in-situ process. The lasers operate in continuous mode without noticeable degradation.

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References

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