Hostname: page-component-54dcc4c588-r5qjk Total loading time: 0 Render date: 2025-10-12T03:34:48.510Z Has data issue: false hasContentIssue false
  • English
  • Français

Undoped and Phosphorus Doped a-Sic:H Films: Investigation of Electrical Properties and Hall Effect

Published online by Cambridge University Press:  01 January 1993

T. Pisarkiewicz ,
T. Stapinski ,
F. Demichelis ,
C.F. Pirn ,
E. Tresso  and
P. Rava
T. Pisarkiewicz
Affiliation:
Institute of Electronics, Academy of Mining and Metallurgy, Krakow, Poland
T. Stapinski
Affiliation:
Institute of Electronics, Academy of Mining and Metallurgy, Krakow, Poland
F. Demichelis
Affiliation:
Dip. Fisica Politecnico,, Torino, Italy
C.F. Pirn
Affiliation:
Dip. Fisica Politecnico,, Torino, Italy
E. Tresso
Affiliation:
Dip. Fisica Politecnico,, Torino, Italy
P. Rava
Affiliation:
Elettrorava S.p.A., Savonera, Torino, Italy
Get access

Abstract

We have deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD), under particular conditions of high H2 dilution and high power density, undoped and phosphorus doped (µc‐SiC:H films. We have obtained n‐doped films with a high band‐gap (E04 up to 2.1 eV) and a high dark conductivity (σ4 up to 10 S cm‐1) which are promising materials for window layers in solar cells. Thermo Electric Power (TEP) measurements allowed to identify the type of majority carriers. The dark conductivity and the Hall mobility have been obtained as a function of temperature in the range 80‐480 K.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 431
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Kanicki, J., “Amorphous and microcrvstalline semiconductors device: optoelectronic devices” (Artech House, Boston 1991).Google Scholar
2. Demichelis, F., Pirri, C.F., Tresso, E., Phil. Mag. B67, 331 (1993).Google Scholar
3. Bednarczyk, D., Bednarczyk, J., Acta Phys. Polonica A30. 295 (1971).Google Scholar
4. Dobrovolski, V.N., Gritsenko, J.I., Fiz. Tverdego Tela 4, 2760 (1962).Google Scholar
5. Gobrecht, H., Tausend, A., Clauss, G., Z.Phys. 176, 155 (1963).Google Scholar
6. Heek, H.F., Solid State Electronics 10, 268 (1967).Google Scholar
7. Matsuda, A., Yamasaki, S., Nakagawa, K., Okushi, H., Tanaka, K., Izima, S., Matsumura, M.,Yamamoto, H., Jpn. J. Appl. Phys. 19, 1305 (1980).Google Scholar
8. Demichelis, F., Pirri, C.F., Tresso, E., J. Appl. Phys. 72, 1327 (1992).Google Scholar
9. Beyer, W. and Overhof, H., in “Semiconductors and Semimetals”. ed. Pankove, J., vol. 21C, p. 258, Academic Press, Orlando 1984.Google Scholar
10. Demichelis, F., Pirri, C.F., Tresso, E., DellaMea, G., Rigato, V., Rava, P., Semic. Science and Tech. 6, 1141 (1991).Google Scholar
11. Demichelis, F., Crovini, G., Osenga, C., Piiri, C.F., Tresso, E., Boarino, L.. “Microcrvstalline Semiconductors - Materials Science and Devices” Ed. Aoyagi, Y., Canham, C., Fauchet, P., Shimizu, I., Tsai, C.C., Pittsburgh 1992 Fall MRS Symp. Proc. vol.283 (in press).Google Scholar