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Ultrathin Silicon Oxide and Nitride – Silicon Interface States

Published online by Cambridge University Press:  10 February 2011

L.J. Brillson ,
A.P. Young ,
J. Schäfer ,
H. Niimi  and
G. Lucovsky
L.J. Brillson
Affiliation:
Departments of Electrical Engineering, Physics, and Center for Materials Research, The Ohio State University, Columbus, OH 43210-1272, brillson.1@osu.edu
A.P. Young
Affiliation:
Departments of Electrical Engineering, Physics, and Center for Materials Research, The Ohio State University, Columbus, OH 43210-1272
J. Schäfer
Affiliation:
Departments of Electrical Engineering, Physics, and Center for Materials Research, The Ohio State University, Columbus, OH 43210-1272
H. Niimi
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695
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Abstract

Local electronic states at nanometer-thick silicon oxide and nitride films on Si can be studied on an unprecedented scale using low - energy cathodoluminescence spectroscopy to observe optical transitions of defect bonding arrangements at ultrathin film interfaces prepared by low -temperature plasma deposition. Our results illustrate significant differences in the dependence of specific defects at the oxide versus nitride interfaces on thermal annealing and hydrogenation.

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References

REFERENCES

1 Buchanan, D.A. and Lo, S.-H., in The Physics and Chemistry of SiO2 and the SiO2-Si Interface, edited by Massoud, H.Z., Poindexter, E.H., and Helms, C.R. (Electrochemical Society, Pennington, NJ 1996), pp. 31–322.Google Scholar
2 Yasuda, T., Ma, Y., Habermehl, S., and Lucovsky, G., Appl. Phys. Lett. 60, p. 434 (1992).10.1063/1.106626Google Scholar
3 Brillson, L.J., Richter, H.W., Slade, M.L., Weinstein, B.A., and Shapira, Y., J. Vac. Sci. Technol. A3, p.1011 (1985).10.1116/1.573110Google Scholar
4 Brillson, L.J. and Viturro, R.E., Scanning Electron Microsc. 2, p. 789 (1988).Google Scholar
5 Brillson, L.J. in Handbook on Semiconductors, Volume 1, edited by Landsberg, P. T. (North-Holland, Amsterdam 1992), ch.7, pp.281–417.Google Scholar
6 Klein, C.A., J. Appl. Phys. 39, 2029 1968.10.1063/1.1656484Google Scholar
7 Ausman, G.A. Jr. and McLean, F.B., Appl. Phys. Lett. 26, 173 (1975).10.1063/1.88104Google Scholar
8 Everhart, T.E. and Hoff, P.H., J. Appl. Phys. 42, p. 5837 (1971).10.1063/1.1660019Google Scholar
9 Young, A.P., Schdäfer, J., Jessen, G.H., Bandhu, R., Brillson, L.J., Lucovsky, G., and Niimi, H., J. Vac. Sci. Technol. B16, p.2177 (1998).10.1116/1.590145Google Scholar
10 Schafer, J., Young, A.P., Brillson, L.J., Niimi, H. and Lucovsky, G., Appl. Phys. Lett. 73, p. 791 (1988).10.1063/1.122003Google Scholar
11 Wang, F., Wolfe, D.M., Hinds, B.J., Lucovsky, G., Platz, R., and Wagner, S. in Mat. Res. Soc. Symp. Proc. 507, p. 267 (1996).10.1557/PROC-507-267Google Scholar
12 Knights, J.C., Street, R.A., and Lucovsky, G., J. Non-Cryst. Solids 35–36, p. 279 (1980).10.1016/0022-3093(80)90607-9Google Scholar
13 Canham, L., Mat. Res. Soc. Bull. July, 1993, pp.22–28 and references therein.10.1557/S0883769400037490Google Scholar
14 Phillip, H.R. and Taft, E.R., Phys. Rev. 120, p.37 (1960).10.1103/PhysRev.120.37Google Scholar
15 Chelikowsky, J.R. and Cohen, M.L., Phys. Rev. B 14, p.556 (1976).10.1103/PhysRevB.14.556Google Scholar
16 Street, R.A., Adv. Phys. 30, p.593 (1981).10.1080/00018738100101417Google Scholar
17 Lee, D.R., Parkeer, C., Hauser, J.R., and Lucovsky, G., J. Vac.Sci.Technol. B 13, p. 1799 (1995).Google Scholar
18 Lenahan, P.M. and Conley, J.F. Jr., J. Vac. Sci. Technol. 16, p.2134 (1998).10.1116/1.590301Google Scholar