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Two-Beam Laser Recrystallization of Silicon on an Insulating Substrate

Published online by Cambridge University Press:  28 February 2011

Samhita Dasgupta ,
Howard E. Jackson  and
Joseph T. Boyd
Samhita Dasgupta
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221–0011
Howard E. Jackson
Affiliation:
Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221–0030 Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221–0011
Joseph T. Boyd
Affiliation:
Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221–0030
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Abstract

Laser recrystallization of silicon on an insulating substrate has been carried out by irradiating polysilicon with both an Ar+ laser operating on all lines in the visible and a CO2 laser operating at 10.6 microns. These experiments were carried out over a variety of laser power densities and substrate temperatures. The use of the two lasers allowed for independent spatial control of temperature in both the polysilicon and the SiO2 layers and helped to reduce the strain at the polysilicon - SiO2 interface. We report the successful recrystallization of polysilicon films without substrate heating for two different silicon-on-insulator structures.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 71
Copyright
Copyright © Materials Research Society 1986

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References

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