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Transmission Electron Microscopy of II-VI/III-V Semiconductor Heteroepitaxial Interfaces

Published online by Cambridge University Press:  21 February 2011

D. Li ,
N. Otsuka ,
J. Qiu ,
J. Glenn Jr. ,
M. Kobayashi  and
R. L. Gunshor
D. Li
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
J. Qiu
Affiliation:
School of Electical Engineering, Purdue University, West Lafayette, IN 47907
J. Glenn Jr.
Affiliation:
School of Electical Engineering, Purdue University, West Lafayette, IN 47907
M. Kobayashi
Affiliation:
School of Electical Engineering, Purdue University, West Lafayette, IN 47907
R. L. Gunshor
Affiliation:
School of Electical Engineering, Purdue University, West Lafayette, IN 47907
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Abstract

Interfaces of pseudomorphic (100)ZnSe/GaAs and (100)CdTe/InSb heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. High resolution electron microscope images show dark bands with thicknesses of one or two monolayers at the interfaces. The interfaces appear as bright lines in dark field images of the 200 type reflections, while they become dark lines in dark field images of the 400 type reflections. These observations are explained by assuming the existence of interfaces layers of III2VI3 compounds which have structural vacancies in the sublattices of the group III atoms.

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References

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