Hostname: page-component-54dcc4c588-tfzs5 Total loading time: 0 Render date: 2025-10-07T15:54:09.864Z Has data issue: false hasContentIssue false
  • English
  • Français

Transmission Electron Diffraction Techniques for Nm Scale Strain Measurement in Semiconductors

Published online by Cambridge University Press:  15 February 2011

J. Vanhellemont ,
K. G. F. Janssens ,
S. Frabboni ,
P. Smeys ,
R. Balboni  and
A. Armigliato
J. Vanhellemont
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, vanhellemont@imec.be
K. G. F. Janssens
Affiliation:
KULeuven, MTM, de Croylaan 2, B-3001 Leuven, Belgium
S. Frabboni
Affiliation:
Dipartimento di Fisica, Universitá di Modena, Via Campi 213/A, 1-41100 Modena, Italy
P. Smeys
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305-4055
R. Balboni
Affiliation:
CNR Istituto LAMEL, Via P. Gobetti 101, I-40129 Bologna, Italy
A. Armigliato
Affiliation:
CNR Istituto LAMEL, Via P. Gobetti 101, I-40129 Bologna, Italy
Get access

Abstract

An overview is given of transmission electron microscopy techniques to address strain with nm scale spatial resolution. In particular the possibilities and limitations of (large angle) convergent beam electron diffraction ((LA)CBED) and electron diffraction contrast imaging (EDCI) techniques are discussed in detail. It will be shown by a few case studies that unique and quantitative information on local strain distributions can be obtained by the combined use of both (LA)CBED and EDCI in correlation with three dimensional finite element simulations of the strain distributions in the thinned specimen.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Hu, S. M., J. Appl. Phys., 70(6), R53 (1991).Google Scholar
2. Steeds, J. W., in “Introduction to Analytical Electron Microscopy”, Eds. Hren, J. J., Goldstein, J. I. and Joy, D. C., p. 387, Plenum Press (New York) (1979).Google Scholar
3. Spence, J. C. H. and Zuo, J. M., “Electron Microdiffraction”, Plenum Press (New York and London), (1992).Google Scholar
4. Eaglesham, D. J., Maher, D. M., Fraser, H. L., Humphreys, C. J. and Bean, J. C., Appl.Phys.Lett., 54, 222 (1989).Google Scholar
5. Pike, W. T., Brown, L. M., Kubiak, R., Newstead, S. M., Powell, A. R., Parker, E. H. and Whall, T. E., J. Cryst. Growth, 111, 925 (1991).Google Scholar
6. Cherns, D., Touaitia, R., Preston, A. R., Rossouw, C. J. and Houghton, D. C., Phil. Mag. A, 64, 597 (1991).Google Scholar
7. Armigliato, A., Servidori, M., Cembali, F., Fabbri, R., Rosa, R., Corticelli, F., Govoni, D., Drigo, A. V., Mazzer, M., Romanato, F., Frabboni, S., Balboni, R., Iyer, S. S. and Guerrieri, A., Microsc.Microanal.Microstruct., 3, 363 (1992).Google Scholar
8. Banhart, F. and Nagel, N., Phil. Mag. A, 70, 341 (1994).Google Scholar
9. Duan, X. F., Cherns, D. and Steeds, J. W., Phil. Mag. A, 70, 1091 (1994).Google Scholar
10. Hirsch, P. B., Howie, A., Nicholson, R. B., Pashley, D. W. and Whelan, M. J., “Electron Microscopy of Thin Crystals”, Butterworths, London (1965).Google Scholar
11. Head, A. K., Humble, P., Clarebrough, L. M., Morton, A. J. and Forwood, C.T., “Computed Electron Micrographs and Defect Identification”, eds. Amelinckx, S., Gevers, R. and Nihoul, J., North Holland, Amsterdam (1973).Google Scholar
12. Janssens, K. G. F., Vanhellemont, J., De Graef, M. and Van der Biest, O., Ultramicroscopy, 45, 323 (1992).Google Scholar
13. Janssens, K., Van der Biest, O., Vanhellemont, J., Maes, H. E., Hull, R. and Bean, J. C., Appl.Phys.Lett. 67, 1530 (1995).Google Scholar
14. Twesten, R. D. and Gibson, J. M., Phys.Rev. B, 50, 17628 (1994).Google Scholar
15. Vanhellemont, J., De Wolf, I., Jannsens, K. G. F., Frabboni, S., Balboni, R. and Armigliato, A., Applied Surface Science, 63, 119 (1993).Google Scholar
16. Kimoto, K., Usami, K., Sakata, H. and Tanaka, M., Jpn. J. Appl. Phys., 32, L211 (1993).Google Scholar
17. Thomas, G. and Goringe, M. J., Transmission Electron Microscopy of Materials, (Wiley, New York, 1979).Google Scholar
18. Bullough, R., Maher, D. M. and Perrin, R. C., phys.stat.sol. (b), 43, 689 (1971).Google Scholar
19. Scheerschmidt, K. and Gleichman, R., in “Electron Microscopy in Solid State Physics”, eds. Bethge, H. and Heydenreich, J., Elsevier, Amsterdam, 289 (1987).Google Scholar
20. Stadelmann, P., Ultramicroscopy, 21, 131 (1987).Google Scholar
21. Tanaka, M., Saito, R., Ueno, K. and Harada, Y., J. Electron Microsc., 29, 408 (1980).Google Scholar
22. Chems, D. and Preston, A. R., J. of Electron Microscop. Tech., 13, 111 (1989).Google Scholar
23. Armigliato, A., Balboni, R. and Frabboni, S., these proceedings.Google Scholar
24. Anderson, R., Klepeis, S., Benedict, J., Vandygrift, W. G. and Orndorff, M., Inst.Phys.Conf.Ser., 100, 491 (1989).Google Scholar
25. Hull, R., Bahnck, D., Stevie, F. A., Koszi, L. A. and Chu, S. N. G., Appl.Phys.Lett., 62, 3408 (1993).Google Scholar
26. Hull, R., Appl.Phys.Lett., 63, 2291 (1993).Google Scholar
27. Vanhellemont, J., Amelinckx, S. and Claeys, C., J. Appl. Phys., 61, 2170 and 2176 (1987).Google Scholar
28. Rafferty, C. S., “Stress effects in silicon oxidation-simulation and experiments”, PhD Dissertation, Stanford University (1989).Google Scholar
29. Harker, A. H., Pinardi, K., Jain, S. C., Atkinson, A. and Bullough, R., Phil. Mag. A, 71, 871 (1995).Google Scholar
30. Chin, D., Ho, S. Y., Hu, S. M., Dutton, R. W. and Moll, J. L., IEEE Trans. Electron Devices, ED-30, 744 (1983).Google Scholar
31. Isomae, S., Yamamoto, S., Aoki, S. and Yajima, A., IEEE Electron Device Letters, EDL-7, 368 (1986).Google Scholar
32. Stiffler, S. R. and Cifuentes, A. O., IEEE Trans. Electron Dev. 40, 557 (1993).Google Scholar
33. Smeys, P. I. L., Griffin, P. B. and Saraswat, K. C., J. Appl. Phys., in press.Google Scholar
34. Vanhellemont, J., Janssens, K.G. F., Frabboni, S., Balboni, R. and Armigliato, A., Electrochemical Society Proceedings Volume 95–30, 174 (1995).Google Scholar
35. Janssens, K. G. F., Vanhellemont, J., Maes, H. E. and Van der Biest, O., Inst.Phys.Conf.Ser., 134, 225 (1993).Google Scholar
36. Janssens, K. G. F., Ph. D. Thesis, University of Leuven 1996, in press.Google Scholar
37. Seitz, H., Seibt, M., Baumann, F. H., Ahlborn, K. and Schröter, W., phys.stat.sol. (a) 150, 625 (1995).Google Scholar