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Transient Photoconductivity Studies of a-Si:H Interfaces

Published online by Cambridge University Press:  28 February 2011

R. A. Street
R. A. Street*
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

The application of transient photoconductivity to the study of contacts and interfaces with a-Si:H is reviewed. The photocurrent is shown to contain three terms - one from the drift of photogenerated carriers, and two from contact and bulk effects due to the electric field induced by the drifting carriers. For different sample configurations, each of these terms can dominate, and each gives different information about a-Si:H bulk or surface electronic properties. The effects are illustrated with data from metal contacts, dielectric interfaces, doped layers and gap cell measurements.

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