Hostname: page-component-54dcc4c588-b5cpw Total loading time: 0 Render date: 2025-10-12T20:15:42.102Z Has data issue: false hasContentIssue false
  • English
  • Français

Transient Electrochemical Measurements During Copper Chemical Mechanical Polishing

Published online by Cambridge University Press:  01 February 2011

Seung-Mahn Lee ,
Wonseop Choi ,
Valentin Craciun  and
Rajiv K. Singh
Seung-Mahn Lee
Affiliation:
Department of Materials Science and Engineering and Particle Engineering Research Center University of Florida, Gainesville, FL 32611, U.S.A.
Wonseop Choi
Affiliation:
Department of Materials Science and Engineering and Particle Engineering Research Center University of Florida, Gainesville, FL 32611, U.S.A.
Valentin Craciun
Affiliation:
Department of Materials Science and Engineering and Particle Engineering Research Center University of Florida, Gainesville, FL 32611, U.S.A.
Rajiv K. Singh
Affiliation:
Department of Materials Science and Engineering and Particle Engineering Research Center University of Florida, Gainesville, FL 32611, U.S.A.
Get access

Abstract

Chronoamperometry was used to investigate the reaction/passivation kinetics and thickness of the chemically modified surface layer on the copper during chemical mechanical polishing (CMP). The result showed that the reaction/passivation kinetics and the thickness of the chemically modified surface layer are strongly dependent on the chemistry of CMP slurry in the chemical aspect of CMP and play critical keys in the selection of the chemistry and its concentration. BTA and H2O2 enhanced the passivation kinetics, resulting in thinner layer on the copper surface. In addition, the reaction kinetics increased as pH decreased.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F2.9
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Preston, F. J. Soc. Glass Technol. 112, 14 (1927)Google Scholar
[2] Brown, N. J. Baker, P. C. and Maney, R. T., Proc. SPIE 306, 42 (1981)Google Scholar
[3] Steigerwald, J. M. Murarka, S. P. and Gutmann, R. J. Chemical Mechanical Planarization of Microelectronic Materials, John Wiley & Sons, New York (1997)Google Scholar
[4] Yu, Y. Yu, C.C. and Orlowski, M. IEEE IEDM, 865 (1993)Google Scholar
[5] Basim, G. B. Ph.D. dissertation, University of Florida (2002)Google Scholar
[6] Choi, W. Lee, S.-M., and Singh, R. K. Proceeding of Material Research Society spring meeting, Material Research Society, San Francisco, 671, M5.1.1 (2001)Google Scholar
[7] Hernandez, J. Wrschka, P. and Oehrlein, G. S. J. Electro. Chem. Soc., 148, G389 (2001)Google Scholar
[8] Stein, D. J. Hetherington, D. L. Guilinger, T. and Cecchi, J. L. J. Electrochem. Soc. 145, 3190 (1998)Google Scholar
[9] Stein, D. J. Cecchi, J. L. and Hetherington, D. L. J.Mat. Res. 14, 3695 (1999)Google Scholar
[10] Nguyen, H. V. Ph.D. Dissertation, Universiteit Twente (2001)Google Scholar
[11] Bielmann, M. Mahajan, U., Singh, R. K. Agarwal, P., Mischler, S., Rosset, E., and Landolt, D., Materials Research Society Symposium – Proceedings, 566, 97 (2000)Google Scholar
[12] Carpio, R., Farkas, J. and Jairath, R., Thin Solid Films, 266, 238 (1995)Google Scholar
[13] Pourbaix, M., “Atlas Of Electrochemical Equilibria In Aqueous Solution”, Nace, Houston, Tx (1974)Google Scholar