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Titanium Oxynitride Thin Film Deposition by Pulsed Laser Ablation of Titanium Targets in Nitrogen

Published online by Cambridge University Press:  01 January 1992

V. Craciun ,
D. Craciun ,
S. Amirhaghi ,
M. Vickers ,
S. Tarling ,
P. Barnes  and
I. W. Boyd
V. Craciun
Affiliation:
Electronic and Electrical Engineering, University College London, London WClE 7JE, UK
D. Craciun
Affiliation:
Electronic and Electrical Engineering, University College London, London WClE 7JE, UK
S. Amirhaghi
Affiliation:
Electronic and Electrical Engineering, University College London, London WClE 7JE, UK
M. Vickers
Affiliation:
Department of Crystallography, Birbek College, London WClE 7HX, UK
S. Tarling
Affiliation:
Department of Crystallography, Birbek College, London WClE 7HX, UK
P. Barnes
Affiliation:
Department of Crystallography, Birbek College, London WClE 7HX, UK
I. W. Boyd
Affiliation:
Electronic and Electrical Engineering, University College London, London WClE 7JE, UK
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Abstract

Reactive pulsed laser deposition of titanium targets in a nitrogen atmosphere has been used to deposit thin titanium oxynitride films on Si substrates. The gold coloured layers exhibited a smooth, featureless surface and good chemical resistance in HF-HNO3 mixtures. The films had a high oxygen content which was responsible for relatively high electrical resistivity, measured to be 200–600 μΩ cm. This new method can easily be applied to the growth of other important nitrides such as ZrN, WN, HfN or the deposition of multilayer structures such as TiN/Ti on a variety of substrates.

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