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Tin-Doping Induced Defects in GaAs Films Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  25 February 2011

S. H. Chen ,
P. Enquist  and
C. B. Carter
S. H. Chen
Affiliation:
Department of Materials Science and Engineering
P. Enquist
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853
C. B. Carter
Affiliation:
Department of Materials Science and Engineering
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Abstract

Heavily Sn-doped GaAs films have been grown by molecular-beam epitaxy and found to contain single-crystal Sn particles situated in the near-surface region of the epilayer GaAs. The morphology and chemical composition of the particles have been examined by using cross-section transmission electron microscopy combined with energy-dispersive x-ray spectroscopy. Different growth conditions were used to study the Sn-particle formation and high-resolution transmission electron microscopy was used to investigate microstructures. The observations are discussed in terms of several models previously proposed for these phenomena.

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