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Thin Film Transistors Made From Hydrogenated MicrocrystallineSilicon

Published online by Cambridge University Press:  15 February 2011

K. C. Wang ,
B. Y. Chen ,
K. C. Hsu ,
T. R. Yew  and
H. L. Hwang
K. C. Wang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
B. Y. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
K. C. Hsu
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
T. R. Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
H. L. Hwang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
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Abstract

Microcrystalline silicon films were deposited by diluted-hydrogen method andhydrogen-atom-treatment method at 250°C in a plasma enhanced chemical vapordeposition system and they were characterized by nuclear magnetic resonance,Raman spectroscopy, and optical bandgap Measurements. One-Mask a-Si:H thinfilm transistors (TFT's) were fabricated with those microcrystallinematerials as the channel layer. The highest electron mobilities of the TFT'sfabricated by diluted-hydrogen method and hydrogen-atom-treatment methodwere 1.23 and 1.04 cm2/V•s, respectively without any thermaltreatment steps.

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References

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