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Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Seong Deok Ahn ,
Seung Youl Kang ,
Yong Eui Lee ,
Meyoung Ju Joung ,
Chul Am Kim  and
Kyung Soo Suh
Seong Deok Ahn
Affiliation:
Applied Devices Department, Basic Research Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350, Korea
Seung Youl Kang
Affiliation:
Applied Devices Department, Basic Research Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350, Korea
Yong Eui Lee
Affiliation:
Applied Devices Department, Basic Research Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350, Korea
Meyoung Ju Joung
Affiliation:
Applied Devices Department, Basic Research Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350, Korea
Chul Am Kim
Affiliation:
Applied Devices Department, Basic Research Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350, Korea
Kyung Soo Suh
Affiliation:
Applied Devices Department, Basic Research Laboratory, ETRI, 161 Gajeong-dong, Yuseong-gu, Daejeon, 305-350, Korea
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Abstract

We have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H6.19
Copyright
Copyright © Materials Research Society 2003

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