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Thin Film InN/Anatase Bilayers as a Substitute Dye/Semiconductor Interface for Solar Cells

Published online by Cambridge University Press:  01 February 2011

Daniel Hoy  and
Martin Kordesch
Daniel Hoy
Affiliation:
dh851403@ohio.edu, Ohio University, Physics and Astronomy, Clippinger Labs RM 251B, Athens, OH, 45701, United States
Martin Kordesch
Affiliation:
kordesch@ohio.edu, Ohio University, Physics and Astronomy, Clippinger Labs RM 251B, Athens, OH, 45701, United States
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Abstract

The electronic properties of an InN/anatse bilayer, proposed as a replacement for the dye/semi-conductor interface in Dye Sensitized Solar Cell[1, 2], are measured. RF sputtered thin films of anatase and InN are used as the “dye” replacement. .Two types of InN film are prepared: polycrystalline samples deposited at high temperature, with an optical band gap of < 1 eV, and as-deposited (at least partially amorphous) samples with an optical band gap >1 eV.Energy Dispersive X-ray fluorescence, X-ray Diffraction, and Raman spectroscopy are used to characterize the samples. The resistance in the dark and under illumination are measured.The samples deposited at high temperature are crystalline and have a sheet resistivity ≈ 4 Ω/⁐, and display no photoconductivity.The partially amorphous samples have sheet resistivity of≈ 500Ω/⁐. Since both types of InN films, including high quality (based on band gap) polycrystalline InN, do not show increased conductivity with light, we conclude that a solar cell based on an InN/anatase bilayer is not feasible.

Keywords

nitridephotovoltaicphotoconductivity

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1102: Symposium LL – Energy Harvesting–From Fundamentals to Devices , 2008 , 1102-LL04-02
Copyright
Copyright © Materials Research Society 2008

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References

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