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Thermomechanical Relaxation of Thin-Film Metallizations

Published online by Cambridge University Press:  22 February 2011

Hartmann Hieber
Hartmann Hieber*
Affiliation:
Philips GmbH Forschungs laboratorium Hamburg, Vogt-Kölln-Str. 30, 2000 Hamburg 54, FRG
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Abstract

Pure Al and Cu films evaporated on thin glass and thermally oxidized silicon substrates are subject to changes in temperature Ṫ>100Ks-1. With constant temperature the stress relaxation is between 1 and 10 % of the thermally induced stress. The stationary creep rates are comparable to diffusion controlled power-law creep. The discontinuous grain growth during the T cycling shifts the transient amplitudes and the stationary slopes of stress to negative values. DC resistance measurements indicate the production and annihilation of vacancies.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 40: Symposium J – Electronic Packaging Materials Science I , 1984 , 191
Copyright
Copyright © Materials Research Society 1985

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