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Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

Published online by Cambridge University Press:  15 February 2011

T. S. Hayes ,
F. T. Ray ,
K. P. Trumble  and
E. P. Kvam
T. S. Hayes
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN 47907
F. T. Ray
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN 47907
K. P. Trumble
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN 47907
E. P. Kvam
Affiliation:
School of Materials Engineering, Purdue University, W. Lafayette, IN 47907
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Abstract

A refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

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