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Thermodynamic and Kinetic Studies of Pulsed-Laser Annealing fromTransient Conductivity Measurements*

Published online by Cambridge University Press:  25 February 2011

P.S. Peercy  and
Michael O. Thompson
P.S. Peercy
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico 87185
Michael O. Thompson*
Affiliation:
Sandia National Laboratory, Albuquerque, New Mexico 87185
*
*This work was performed at Sandia National Laboratories andsupported by the U.S. Department of Energy under contract numberDE-AC04-76DP00789.
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Abstract

Simultaneous measurements of the transient conductance and time-dependentsurface reflectance of the melt and solidification dynamics produced bypulsed laser irradiation of Si are reviewed. These measurements demonstratethat the melting temperature of amorphous Si is reduced 200 ± 50 K from thatof crystalline Si and that explosive crystallization in amorphous Si ismediated by a thin (≤ 20 nm) molten layer that propagates at ~ 15 m/sec.Studies with 3.5 nsec pulses permit an estimate of the dependence of thesolidification velocity on undercooling. Measurements of the effect of Asimpurities on the solidification velocity demonstrate that high Asconcentrations decrease the melting temperature of Si (~ 150 K for 7 at.%),which can result in surface nucleation to produce buried melts. Finally, thesilicon-germanium alloy system is shown to be an ideal model system for thestudy of superheating and undercooling. The Si50Ge50alloy closely models amorphous Si, and measurements of layered Si-Ge alloystructures indicate superheating up to 120 K without nucleation of internalmelts. The change in melt velocity with superheating yields a velocityversus superheating of 17 ± 3 k/m/sec.

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Footnotes

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Present Address: Cornell University, Department of Materials Sciences,Ithaca, NY.

References

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