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Thermally Stimulated Conductivity in a-Si:H at low Temperatures

Published online by Cambridge University Press:  16 February 2011

M. Zhu ,
M.B. Von Der Linden  and
W.F. Van Der Weg
M. Zhu
Affiliation:
Dept.of Physics, Graduate School, Academia Sinica, Beijing 100039, P.O. Box 3908, China
M.B. Von Der Linden
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA, Utrecht, The Netherlands
W.F. Van Der Weg
Affiliation:
Debye Institute, Utrecht University, P.O. Box 80.000, 3508 TA, Utrecht, The Netherlands
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Abstract

The low temperature thermally stimulated conductivity (TSC) in a-Si:H film has been investigated in the temperature range from 20 to 150 K. Unlike the results of the high temperature TSC, the low temperature peak value and position (T m ) of TSC do not depend on the starting temperature T0 at low temperatures. This new phenomenon can not be explained by TSC theory [1]. Based on the multiple trapping (MT) Model, TSC theory limits its application to the intermediate and high temperature range. In this paper, a model of the hopping conduction with the transport energy E t in the band tail is proposed to understand the behavior of the low temperature TSC in which the thermal emission energy E m does not depend on the starting temperature of TSC.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 449
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCE

1. Pritzsche, H. and Ibaraki, N., Phil. Mag. B 52, 299 (1985)Google Scholar
2. Tiedje, T. and Rose, A., Solid State Commun. 37, 49, (1981)Google Scholar
3. Orienstein, J. and Kastner, M., Phys. Rev. Lett. 46, 1421 (1981)Google Scholar
4. Zhu, M. and Fritzsche, H., Phil. Mag. B 53, 41 (1986)CrossRefGoogle Scholar
5. Landweer, G. and Bezemer, J., in Advances in disordered semiconductors 1, “Amorphous silicon and related Materials”, edited by Fritzsche, H. (World Scientific, Singapore 1988) p. 525 Google Scholar
6. Oktu, O., Usula, S., Adriaenssens, G. J., Tounay, H. and Eray, A., S.P.I.E. Vol. 138, 813 (1990)Google Scholar
7. Misra, D. S., Kumar, A. and Agarwal, S.C., Phys. Rev. B 31, 1047 (1985)CrossRefGoogle Scholar
8. Zhou, J. H. and Elliott, S. R., Phys. Rev. B 46, 9792 (1992)CrossRefGoogle Scholar
9. Zhu, M., Ding, Y., Zong, J. and Liu, H., ACTA PHYSICS SINICA 3 200 (1994)Google Scholar
10. Zhu, M., von der Linden, M. B., Bezemer, J., Schropp, R. E.I. and van der Weg, W. F., J. Non-Cryst. Solids 137/138 355 (1991)Google Scholar
11. Shapiro, F. R. and Adler, D., J. Non-Cryst. Solids 74 189 (1985)Google Scholar
12. Monroe, D., Phys. Rev. Lett. 54, 146 (1985)Google Scholar
13. Stutzmann, M., J. Non-Cryst. Solids 97/98 105 (1987)Google Scholar