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Thermal Expansion of Low Dielectric Constant Thin Films by High-Resolution X-Ray Reflectivity

Published online by Cambridge University Press:  01 February 2011

Kazuhiko Omote  and
Yoshiyasu Ito
Kazuhiko Omote
Affiliation:
X-Ray Research Laboratory, Rigaku Corporation, Akishima, Tokyo, 196-8666, JAPAN
Yoshiyasu Ito
Affiliation:
X-Ray Research Laboratory, Rigaku Corporation, Akishima, Tokyo, 196-8666, JAPAN
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Abstract

By introducing high precision sample alignment technique, repeatability of incident angle to the sample surface for x-ray reflectivity (XRR) measurement is achieved to be within 0.3 arcsec. As a result, film thickness and density are possible to be measured repeatability within 0.03% and density within 0.26%. This accuracy realized to detect very small change of thermal expansion of thin films. The coefficient of thermal expansions (CTE) for porous low-k films deposited by CVD method were measured up to 400°C. The obtained values are in the range from 40 to 80 x10-6 K-1 and they are very large compare to that of copper (16-20 x10-6 K-1).

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 875: Symposium O – Thin Films - Stresses and Mechanical Properties XI , 2005 , O8.2
Copyright
Copyright © Materials Research Society 2005

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References

1. For example, Proceedings of the IEEE 2001 International Interconnect Technology Conference, San Francisco, Calfolnia, USA.Google Scholar
2. Nielsen, J. A., “Elements of Modern X-Ray Physics,” (Wiley, 2001) pp. 61–78.Google Scholar
3. Wu, W., Wallance, W. E., Lin, E. K., and Lynn, G. W., J. Appl. Phys. 87, 1193 (2000).Google Scholar