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Temperature Dependence of Resistivity for Tin And Ti-Si-N Films

Published online by Cambridge University Press:  15 February 2011

U. Gottlieb ,
X. Sun ,
E. Kolawa  and
M. -A. Nicolet
U. Gottlieb
Affiliation:
Laboratoire des Matériaux et du Génie Physique, France
X. Sun
Affiliation:
California Institute of Technology, Pasadena, CA, 91125
E. Kolawa
Affiliation:
California Institute of Technology, Pasadena, CA, 91125
M. -A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, CA, 91125
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Abstract

We have measured by the four-point probe or Van der Pauw technique the resistivity in vacuum from 77 K to 873 K or 1073 K of Ti34Si23N43 and Ti53N47. These films were reactively sputter-deposited on oxidized silicon wafers, with thickness ranging from 200 nm to 500 nm. The resistivity of the Ti34 Si23N43 films decreases with temperature from 680. μΩcm at 80 K to about 570 μΩcm at 873 K. In contrast, resistivity of our Ti53N47 films rises with temperature, reaching a stable value of 62 μΩcm at above 673 K.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 361
Copyright
Copyright © Materials Research Society 1996

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References

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